JPS63186475U - - Google Patents
Info
- Publication number
- JPS63186475U JPS63186475U JP7755987U JP7755987U JPS63186475U JP S63186475 U JPS63186475 U JP S63186475U JP 7755987 U JP7755987 U JP 7755987U JP 7755987 U JP7755987 U JP 7755987U JP S63186475 U JPS63186475 U JP S63186475U
- Authority
- JP
- Japan
- Prior art keywords
- glove
- gateball
- sewn
- cloth
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004744 fabric Substances 0.000 claims 1
- 239000010985 leather Substances 0.000 claims 1
Landscapes
- Electric Clocks (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7755987U JPS63186475U (en]) | 1987-05-22 | 1987-05-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7755987U JPS63186475U (en]) | 1987-05-22 | 1987-05-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63186475U true JPS63186475U (en]) | 1988-11-30 |
Family
ID=30925677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7755987U Pending JPS63186475U (en]) | 1987-05-22 | 1987-05-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63186475U (en]) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6916745B2 (en) | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
| US6991977B2 (en) | 2001-10-17 | 2006-01-31 | Fairchild Semiconductor Corporation | Method for forming a semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
| US7033891B2 (en) | 2002-10-03 | 2006-04-25 | Fairchild Semiconductor Corporation | Trench gate laterally diffused MOSFET devices and methods for making such devices |
| US7061066B2 (en) | 2001-10-17 | 2006-06-13 | Fairchild Semiconductor Corporation | Schottky diode using charge balance structure |
| US7265415B2 (en) | 2004-10-08 | 2007-09-04 | Fairchild Semiconductor Corporation | MOS-gated transistor with reduced miller capacitance |
| US7291894B2 (en) | 2002-07-18 | 2007-11-06 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device with low output capacitance |
| US7301203B2 (en) | 2003-11-28 | 2007-11-27 | Fairchild Korea Semiconductor Ltd. | Superjunction semiconductor device |
| US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
| US7345342B2 (en) | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
| US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
| US7385248B2 (en) | 2005-08-09 | 2008-06-10 | Fairchild Semiconductor Corporation | Shielded gate field effect transistor with improved inter-poly dielectric |
| US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
| US7504306B2 (en) | 2005-04-06 | 2009-03-17 | Fairchild Semiconductor Corporation | Method of forming trench gate field effect transistor with recessed mesas |
| US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
| US7605040B2 (en) | 2002-02-23 | 2009-10-20 | Fairchild Korea Semiconductor Ltd. | Method of forming high breakdown voltage low on-resistance lateral DMOS transistor |
| US7625793B2 (en) | 1999-12-20 | 2009-12-01 | Fairchild Semiconductor Corporation | Power MOS device with improved gate charge performance |
| US7638841B2 (en) | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| US8836028B2 (en) | 2011-04-27 | 2014-09-16 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8928077B2 (en) | 2007-09-21 | 2015-01-06 | Fairchild Semiconductor Corporation | Superjunction structures for power devices |
-
1987
- 1987-05-22 JP JP7755987U patent/JPS63186475U/ja active Pending
Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7625793B2 (en) | 1999-12-20 | 2009-12-01 | Fairchild Semiconductor Corporation | Power MOS device with improved gate charge performance |
| US7345342B2 (en) | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| US7429523B2 (en) | 2001-10-17 | 2008-09-30 | Fairchild Semiconductor Corporation | Method of forming schottky diode with charge balance structure |
| US6991977B2 (en) | 2001-10-17 | 2006-01-31 | Fairchild Semiconductor Corporation | Method for forming a semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
| US7061066B2 (en) | 2001-10-17 | 2006-06-13 | Fairchild Semiconductor Corporation | Schottky diode using charge balance structure |
| US7605040B2 (en) | 2002-02-23 | 2009-10-20 | Fairchild Korea Semiconductor Ltd. | Method of forming high breakdown voltage low on-resistance lateral DMOS transistor |
| US7291894B2 (en) | 2002-07-18 | 2007-11-06 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device with low output capacitance |
| US7033891B2 (en) | 2002-10-03 | 2006-04-25 | Fairchild Semiconductor Corporation | Trench gate laterally diffused MOSFET devices and methods for making such devices |
| US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
| US8889511B2 (en) | 2003-05-20 | 2014-11-18 | Fairchild Semiconductor Corporation | Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor |
| US7595524B2 (en) | 2003-05-20 | 2009-09-29 | Fairchild Semiconductor Corporation | Power device with trenches having wider upper portion than lower portion |
| US8936985B2 (en) | 2003-05-20 | 2015-01-20 | Fairchild Semiconductor Corporation | Methods related to power semiconductor devices with thick bottom oxide layers |
| US7638841B2 (en) | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| US7344943B2 (en) | 2003-05-20 | 2008-03-18 | Fairchild Semiconductor Corporation | Method for forming a trench MOSFET having self-aligned features |
| US6916745B2 (en) | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
| US7301203B2 (en) | 2003-11-28 | 2007-11-27 | Fairchild Korea Semiconductor Ltd. | Superjunction semiconductor device |
| US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
| US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
| US7534683B2 (en) | 2004-10-08 | 2009-05-19 | Fairchild Semiconductor Corporation | Method of making a MOS-gated transistor with reduced miller capacitance |
| US7265415B2 (en) | 2004-10-08 | 2007-09-04 | Fairchild Semiconductor Corporation | MOS-gated transistor with reduced miller capacitance |
| US7504306B2 (en) | 2005-04-06 | 2009-03-17 | Fairchild Semiconductor Corporation | Method of forming trench gate field effect transistor with recessed mesas |
| US7385248B2 (en) | 2005-08-09 | 2008-06-10 | Fairchild Semiconductor Corporation | Shielded gate field effect transistor with improved inter-poly dielectric |
| US7598144B2 (en) | 2005-08-09 | 2009-10-06 | Fairchild Semiconductor Corporation | Method for forming inter-poly dielectric in shielded gate field effect transistor |
| US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
| US7473603B2 (en) | 2006-06-19 | 2009-01-06 | Fairchild Semiconductor Corporation | Method for forming a shielded gate trench FET with the shield and gate electrodes being connected together |
| US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
| US8928077B2 (en) | 2007-09-21 | 2015-01-06 | Fairchild Semiconductor Corporation | Superjunction structures for power devices |
| US8836028B2 (en) | 2011-04-27 | 2014-09-16 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |